| Features |
|
Outstanding
step coverage and reflow properties |
|
|
TEOS-O3 CVD system offers excellent
gap filling and is superior in the void-free filling of gaps with
a high aspect ratio, as compared with the SiH4-O2
CVD system. |
|
|
 |
|
<- Annealing
provided after deposition with A200
Scanning electron microscope (SEM) |
|
| Film type: |
BPSG |
| Space: |
0.15μm |
| Height: |
0.9μm |
| Aspect ratio: |
6 |
|
|
| Stable deposition characteristics |
|
The adoption of the direct
vent type chamber ensures low and stable particle density irrespective
of the system surrounding environment. |
|
| Improvement of maintainability |
|
N2 purging of the periphery of a gas nozzle
and chamber inner wall fosters better maintainability. A200 is outfitted
with a susceptor with a diameter smaller than a wafer diameter,
which contributes to substantial reduction in powder adhesion to
the chamber. |
|
| Low running cost |
|
Improvement in maintainability leads to
a better operating rate. A drastic cutback in the quantity of liquid
consumed is realized through the adoption of the new gas supplying
system. |
|
| System |
Atmospheric
pressure CVD system MODEL: A200 |
| Wafer
process |
Single
wafer (multi-recipe-capable) |
| System
dimensions |
W
(width): 1500mm, D (depth): 2475mm, H (height): 2250mm |
| Wafer
size |
8"
(φ200mm)(*1) |
| Deposition
temperature |
380
to 450°C |
| Deposition
rate |
Up
to 2600 Å/min(*2) |
| Film
thickness |
1000 to 12000 Å |
| Number
of chambers |
1
or 2 |
| Process(*4) |
TEOS
O3(PriMIX) |
| Deposition
type |
NSG PSG BPSG |
| Liquid
source(*4) |
TEOS
Si(OC2H5)4 TetraEthOxySilane |
| TMOP
PO(OCH3)3
TriMethOxyPhosphine |
| TEB
B(OC2H5)3 TriEthoxyBorine |
| Liquid
supply type(*4) |
LPCDVS
Liquid Phase
Controlled Direct
Vaporization System
|
| Film
thickness consistency |
In
the wafer: Max. ±3.0%
/ Between the wafers: Max. ±3.0% |
| Impurity
concentration uniformity |
In
the wafer: Max. ±3.0%
/ Between the wafers: Max. ±3.0% |
| Throughput |
15
wafers/hr [BPSG 5000 Å 420°C TEOS/O3 ratio: 8] |
| Particles |
Max.
10 of particles/ wafer (Size: Increased 0.3μm or larger) |
| Wafer
stage |
Molybdenum
(Mo)(*3) |
|
Number of registered recipes |
Process
recipe: Max. 200 Heater recipe: Max.50 |
| PC |
OS:
Windows2000 or WindowsXP |
