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ATO
series
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Continuous Atmospheric Pressure TEOS/O3 CVD
System
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| Features |
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Outstanding self-planarization
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ATO Series capitalizes on a process
by TEOS/O3 thermochemical reaction, which enhances flexibility
in deposition that leads to excellent filling.
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Prominent deposition characteristics
with the liquid source direct vaporization system
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ATO Series is capable of vaporizing
a directly-controlled liquid source and sending it to the gas
dispersion head, which delivers stable film thickness consistency
and excellent impurity concentration uniformity.
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High maintainability and low
TCO
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The
utilization of not only the advanced dispersion head gas but the
automatic tray exchanger offers the shortening of maintenance time.
The reduction in exhaust gas treatment is actualized through the
optimization of the liquid source.
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Enhanced operability
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ATO
Series, outfitted with a LCD display, assures superior operability
through process parameter specifying and in-process monitoring.
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| Performance |
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Designed for φ200-mm wafers (ATO8000) and φ150-mm wafers)
- Prominent Continuous atmospheric pressure CVD reaction with TEOS,
TMOP, TEB, and O3
Excellent step coverage BPSG deposition actualized. (NSG deposition
available as well)
- Adopted with AMAYA original vaporization system for CV source
supply (liquid control/ direct vaporization)
- Reasonable initial investment and low maintenance/operation cost
(CVD source consumed: Approx. 1/3 as compared with other companies)
- NSG model and BPSG mode available
- Throughput: Up to 57 wafers/hr
- Excellent gap filling through STI process
- Excellent film thickness consistency and impurity concentration
uniformity |
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Optional functions
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Multiple wafer-size process (φ125mm/
φ150mm/ φ200mm)
The minimization of the exchange area in wafer size change, which
contributes to cost cutting
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