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Dseries
(D601)
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Single Wafer Atmospheric Pressure TEOS/O3 CVD
System,
Single Wafer Atmospheric Pressure SiH4/O2 CVD System
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Face-down type chamber delivers prominent deposition characteristics and maintainability.
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| The adoption of the direct vent type chamber, irrespective of the atmospheric pressure system, ensures prolonged stable deposition characteristics and low particle density insusceptible to the system surrounding environment. |
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D601 appearance
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‘Deposition type
NSG(USG),PSG,BPSG
<Chamber internal structure>
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| Features |
ELow particle density |
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N2 purging of the periphery of a gas nozzle and chamber inner wall fosters better maintainability ensuring a prolonged maintenance cycle. This AP CVD system is outfitted with a susceptor with a diameter smaller than a wafer diameter, which contributes to substantial reduction in powder adhesion to the chamber and no deposition on the back of a wafer. |
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| EProminent deposition characteristics |
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TEOS/O3 CVD system offers outstanding step coverage and evenness and is superior in the void-free filling of gaps. |
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Performance
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E
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Wafer size
Σ50- (6 wafers) to Σ200-mm wafers |
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E
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Maintenance cycle |
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Maintenance item
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Maintenance method
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Maintenance cycle (500-Κm deposition)
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| Exhaust system |
Replacement of the exhaust heater
cover and inner cover (replaced with spares) |
Every 1000 wafers |
| Cleaning of the exhaust port |
Every 1000 wafers |
| Gas nozzle |
Check for deposit on the nozzle (minute amount) |
Every 18000 wafers |
| Susceptor |
Check for deposit on the susceptor (none) |
Every 200000 wafers or annually |
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Optional functions
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Addition of an annealing chamber
Addition of process gas
Multiple wafer-size process (support for irregular sizes)
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