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Doctor
T
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MOCVD
System
Designed for φ100-mm - φ200-mmwafers
Mass production of FeRAM-LSI has been realized by using
our newly produced system
Widespread application of the field except PZT, BST and
Metal electrode
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D
series
: Single Wafer Atmospheric Pressure
CVD System
type
D301: Multiple Single Wafer Atmospheric Pressure
CVD System
type D501:
Batch type Atmospheric Pressure SiH4/O3
CVD System
type D601:
Single Wafer Atmospheric Pressure TEOS/O3
CVD System, Single Wafer Atmospheric Pressure SiH4/O2
CVD System
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A200
: Single Wafer Atmospheric Pressure
CVD System
Single Wafer Atmospheric Pressure CVD System
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A6300
: Continuous Atmospheric Pressure
SiH4/O2 CVD System
Multiple wafer-size-capable sophisticated CVD system,φ100-
and φ150-mm wafers
Superior high throughput actualized with a dual-lane system. |
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AMAX1000s
:
High
Throughput APCVD System SiH4/O2
principal use: Solar cell
Designed
for □125mm
- □155mm |
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AMAX1200
: Continuous Atmospheric Pressure
CVD System
Designed for φ300-mm wafers and GEM300
Designed for low-temperature deposition of USG, PSG, and BPSG
interlayer dielectric and back deposition on silicon substrates.
Metal contamination minimized (as compared with other companies):
Up to 1.0E9 atoms/cm2 |
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AMAX200
/ AMAX800
: Continuous Atmospheric Pressure
SiH4/O2 CVD System
Multiple wafer-size-capable CVD system (AMAX200 for φ150-mm
wafers, AMAX800 for φ200-mm wafers) |
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ATO6000
/ ATO8000 :
Continuous Atmospheric Pressure TEOS/O3
CVD System
Liquid Phase Controlled Direct Vaporization System adopted
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