Face Down Deposition, High Performance APCVD
A200V
- Thickness Nu WiW ±2％
- Less Particle Design
- Good Step Coverage
- Small Footprint
- Lower Temp. Oxide
- Good Maintenability
- Safety
Feature
- Face down deposition in closed chamber by chucking wafer on heater above dispersion head realized good thermal uniformity to make good film thickness Nu, and less particle additions.
- Backside Gas from the backside wafer prevent backside deposition and prevent extra SiO deposition on the wall of parts of chambers.
- Minimized system footprint.
Performance
| Film Thickness Nu |
≦±2% |
| Wafer Size |
8 inch or the less |
| Gas |
SiH4, O2, PH3, B2H6, TEOS, TEB, TMOP, O3, N2 |
| Deposition Temp. |
300℃～450℃ |
| Productivity |
20WPH at depositing 500nm |
Specifictions
| System Size |
890mm(W) x 2300mm(D) x 2250mm(H) |
| Heaters |
Heater Coils |
| Loader/Unloader |
Robot Cassette to Cassette transfer, Sliders. |
| Dispersion Head (Gas Nozzle) |
Round Type |
